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1. product profile 1.1 general description a 1400 w extremely rugged ldmos power transistor for broadcast and industrial applications in the hf to 128 mhz band. 1.2 features and benefits ? typical pulsed performance at frequency of 108 mhz, a supply voltage of 50 v and an i dq of 40 ma, a t p of 100 ? s with ? of 20 %: ? output power = 1400 w ? power gain = 28 db ? efficiency = 72 % ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf to 128 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications blf178xr; blf178xrs power ldmos transistor rev. 4 ? 12 july 2013 product data sheet table 1. application information test signal f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw 108 50 1200 23 80 pulsed rf 108 50 1400 28 72
blf178xr_blf178xrs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 4 ? 12 july 2013 2 of 14 nxp semiconductors blf178xr; blf178xrs power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol blf178xr (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] blf178xrs (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version blf178xr - flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a blf178xrs - earless flanged balanced ldmost ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage ? 6+11v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c blf178xr_blf178xrs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 4 ? 12 july 2013 3 of 14 nxp semiconductors blf178xr; blf178xrs power ldmos transistor 5. thermal characteristics [1] t j is the junction temperature. [2] rth(j-c) is measured under rf conditions. [3] see figure 1 . table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 150 ?c [1] [2] 0.11 k/w z th(j-c) transient thermal impedance from junction to case t j = 150 ?c; t p = 100 ? s; ? =20% [3] 0.033 k/w (1) ? = 1 % (2) ? = 2 % (3) ? = 5 % (4) ? = 10 % (5) ? = 20 % (6) ? = 50 % (7) ? = 100 % (dc) fig 1. transient thermal impedance from junction to case as a function of pulse duration d d d w s v = w k m f m m . : blf178xr_blf178xrs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 4 ? 12 july 2013 4 of 14 nxp semiconductors blf178xr; blf178xrs power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =5.5ma110--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 550 ma 1.25 1.7 2.25 v v gsq gate-source quiescent voltage v ds =50 v; i d =20ma 0.8 1.3 1.8 v i dss drain leakage current v gs =0v; v ds =50v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -77-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =19.25a -0.07- ? table 7. ac characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 5.5 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 414 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 184 - pf table 8. rf characteristics test signal: pulsed rf; t p = 100 ? s; ? = 20 %; f = 108 mhz; rf performance at v ds =50v; i dq =40ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 1400 w 27 28 - db rl in input return loss p l = 1400 w - ? 15 ? 11 db ? d drain efficiency p l = 1400 w 68 72 - % blf178xr_blf178xrs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 4 ? 12 july 2013 5 of 14 nxp semiconductors blf178xr; blf178xrs power ldmos transistor 7. test information 7.1 ruggedness in class-ab operation the blf178xr and blf178xrs are capable of withstanding a load mismatch corresponding to vswr > 65 : 1 through all phases under the following conditions: v ds =50v; i dq =40ma; p l = 1400 w pulsed; f = 108 mhz. 7.2 impedance information v gs = 0 v; f = 1 mhz. fig 2. output capacitance as a function of drain-source voltage; typical values per section d d d 9 ' 6 9 & r v v s ) fig 3. definition of transistor impedance table 9. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l = 1400 w. f z i z l (mhz) (? ) ( ? ) 108 2.35 ? j6.06 2.78 + j0.48 001aan207 gate 1 gate 2 drain 2 drain 1 z i z l blf178xr_blf178xrs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserve d. product data sheet rev. 4 ? 12 july 2013 6 of 14 nxp semiconductors blf178xr; blf178xrs power ldmos transistor 7.3 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. printed-circuit board (pcb): rf 35; ? r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 ? m. see table 10 for a list of components. fig 4. component layout for class-ab production test circuit & |